Valence band structure of the Si(331)-(12 × 1) surface reconstruction.
نویسندگان
چکیده
Using angle-resolved photoelectron spectroscopy we investigate the electronic valence band structure of the Si(331)-(12 × 1) surface reconstruction for which we recently proposed a structural model containing silicon pentamers as elementary structural building blocks. We find that this surface, reported to be metallic in a previous study, shows a clear band gap at the Fermi energy, indicating semiconducting behavior. An occupied surface state, presumably containing several spectral components, is found centered at - 0.6 eV exhibiting a flat energy dispersion. These results are confirmed by scanning tunneling spectroscopy and are consistent with recent first-principles calculations for our structural model.
منابع مشابه
Valence band structure of the Si(331)-(12 times 1) surface reconstruction
Using angle-resolved photoelectron spectroscopy we investigate the electronic valence band structure of the Si(331)-(12× 1) surface reconstruction for which we recently proposed a structural model containing silicon pentamers as elementary structural building blocks. We find that this surface, reported to be metallic in a previous study, shows a clear band gap at the Fermi energy, indicating se...
متن کاملStructure and stability of the Si(331)-(12Ã1) surface reconstruction investigated with first-principles density functional theory
We recently proposed a structural model for the Si!331"-!12!1" surface reconstruction containing silicon pentamers and adatoms as elementary structural building blocks. Using first-principles density functional theory we here investigate the stability of a variety of adatom configurations and determine the lowest-energy configuration. We also present a detailed comparison of the energetics betw...
متن کاملAtomically precise Si(331)-(12×1) surfaces
Si(331)-(12x1) is the only confirmed planar silicon surface with a stable reconstruction located between (111) and (110). We have optimized the annealing sequence and are able to obtain almost defect free, atomically precise surface areas approaching micrometer dimensions. The unprecedented perfection of the surface combined with its pronounced structural anisotropy makes it a promising candida...
متن کاملMeasurement of band offsets in Si/Si12xGex and Si/Si12x2yGexCy heterojunctions
Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si12xGex and Si/Si12x2yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si12xGex heterostructures and conduction-band and valence-band offsets in Si/Si12x2yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured...
متن کاملThe chemisorption of H2C[Si(CH3)3]2 and Si6(CH3)12 on Si(100) surfaces
The chemisorption of bis~trimethylsilyl!methane ~BTM, CH2@Si~CH3!3#2! and dodecamethylcyclohexasilane ~DCS, Si6~CH3!12! on clean Si~100! surfaces has been studied by C 1s core-level and valence-band photoemission spectroscopy. Our model for the deposition of carbon by BTM involves decomposition into a –CH2Si~CH3!3 surface moiety for room-temperature adsorption, which further decomposes upon ann...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Journal of physics. Condensed matter : an Institute of Physics journal
دوره 23 13 شماره
صفحات -
تاریخ انتشار 2011